U. S. Patent # 6,187,165 (2001)

Abstract

Novel arrays of nanowires made of semi-metallic Bismuth (Bi) is disclosed made by unique electrodeposition techniques. Because of the unusual electronic properties of the semi-metallic Bi and the nanowire geometry, strong finite size effects in transport properties are achieved. In addition, very large positive magnetoresistance, 300% at low temperatures and 70% at room temperature, with quasilinear field dependence have been attained.

Inventors

C. L. Chien, P. C. Searson, and K. Liu

Assignee

The John Hopkins University (Baltimore, MD)

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