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Lithographic patterning
Mask Aligner

Features
- Contact photolithography across 3" wafer with 2 micron feature size
- Multiple-mask alignment with 2 micron accuracy
Projection photolithography

0.5 micron feature size
Electron-beam lithography
Features
- 0.1 micron feature size
- Multiple-mask alignment with 0.5 micron accuracy
Contact: Daniel Reich
Return to Fabrication and Processing

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